Due of the back-to-back pn junctions, there is no conduction path between the emitter and the collector. The common p region between the two n regions is connected to the third contact, base. There are two back-to-back pn junctions between the emitter and the collector contacts. The schematic of the npn BJT can be seen in the figure below. The file already contains the geometry of the BJT, the doping profile, boundary conditions, and the CHARGE solver region. Open the npn_BJT_ini.ldev project file in CHARGE. Simulation setupĭownload the npn_BJT.ldev and npn_BJT_ini.ldev project files and save them in the same folder. The project file contains the material properties, geometry, and simulation region required to run the example. In the second part of this example we will perform a small-signal analysis to calculate the unity-current-gain cutoff frequency (fT) of the transistor.Ī project file is provided to assist with the application example. In the first part we will perform steady-state simulations to calculate the current-voltage characteristics and the current gain of the BJT. This example describes the simulation of a npn bipolar junction transistor (BJT).
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